Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach
Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach
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采用新型六角 BDD 量子电路方法制造基于 GaAs 的集成 2 位半加法器和全加法器
DOI：
10.1109/isdrs.2001.984596
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
S. Kasai
中科院分区：
文献类型：
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作者：
Kasai Seiya;M. Yumoto;Hideki Hasegawa;S. Kasai
超高密度，超高速和超低功耗的逻辑电路超过了硅CMOS LSI的规模限制，实现了纳米级量子器件的高密度集成，是有前途的候选人，用于先进的信息技术。这也将在新兴的广泛的纳米技术领域中找到应用，包括化学和生物学，用于纳米传感，纳米尺度信号处理和纳米控制。然而，到目前为止，还没有建立量子集成电路的现实方法。为了克服这种情况，我们最近提出了一种六角形二元决策图（BDD）量子电路方法，用于III-V族量子器件的高密度集成。本文的目的是通过GaAs基BDD 2位半加器和全加器电路的制作来研究新型六边形BDD量子电路方法的可行性。
Ultrahigh-density, ultrahigh-speed and ultralow power consumption logic circuits beyond the Si CMOS LSI scaling limit, realized by high density integration of nanometer-scale quantum devices, are promising candidates for use in advanced information technology. This will also find applications in the emerging wide range nanotechnology area, covering chemistry and biology, for nano-sensing, nano-scale signal processing and nano-control. However, no realistic approach for quantum integrated circuits has been established so far. To overcome this situation, we have recently proposed a hexagonal binary decision diagram (BDD) quantum circuit approach for high density integration of III-V quantum devices. The purpose of this paper is to investigate the feasibility of the novel hexagonal BDD quantum circuit approach through fabrication of GaAs-based BDD 2-bit half adder and full adder circuits.
S.Kasai：“基于二维电子气肖特基面内栅极和包裹栅极控制的具有单点和多点的 GaAs 单电子器件的制造和表征”Jpn.J.Appl.Phys。
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