Ultraviolet‐ozone oxidation of GaAs(100) and InP(100)
Ultraviolet‐ozone oxidation of GaAs(100) and InP(100)
复制标题
GaAs(100)和InP(100)的紫外臭氧氧化
DOI：
10.1116/1.586539
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发表时间：
1993
影响因子：
1.4
通讯作者：
M. J. Graham
中科院分区：
文献类型：
--
作者：
Z. Lu;B. Bryskiewicz;J. McCaffrey;Z. Wasilewski;M. J. Graham
本文报道了利用高分辨率 X 射线光电子能谱 (XPS) 辅以透射电子显微镜 (TEM) 对 GaAs(100) 和 InP(100) 的紫外 (UV) 臭氧氧化的研究。对于GaAs(100)，观察到各种氧化物As2O3、As2O5 和Ga2O3。 As2O3 核心水平强度呈对数增长，而 As2O5 和 Ga2O3 则随紫外线臭氧暴露时间呈线性增长。角度分辨 XPS 和 TEM 测量证实该氧化物具有层状结构，示意性表示为 (As2O5, Ga2O3)/(As2O3, Ga2O3)/GaAs(100)。可能发生两种不同的氧化过程；第一个过程是 GaAs(100)/氧化物界面处的本体氧化，第二个过程发生在较高氧化物/较低氧化物界面处，是将较低 As 氧化物转化为较高 As 氧化态。在InP(100)上，观察到了与In2O3和PO x 相对应的氧化物，并且各自的光电子强度随着紫外臭氧暴露时间呈对数增长。角度分辨 XPS 测量表明 In2O3 和 PO x 均匀混合。根据光电子强度比计算得出的总氧化物厚度随 GaAs(100) 和 InP(100) 上的曝光时间呈对数增长。
This article reports on a study of the ultraviolet (UV)‐ozone oxidation of GaAs(100) and InP(100) using high‐resolution x‐ray photoelectron spectroscopy(XPS) complemented by transmission electron microscopy(TEM). For GaAs(100), various oxides As2O3, As2O5, and Ga2O3 are observed. The As2O3 core level intensity follows a logarithmic growth, while As2O5 and Ga2O3 exhibit a linear growth as a function of UV‐ozone exposure time. Angle‐resolved XPS and TEMmeasurements confirm that the oxide has a layered structure represented schematically as (As2O5, Ga2O3)/(As2O3, Ga2O3)/GaAs(100). Two different oxidation processes likely occur; the first is bulk oxidation at the GaAs(100)/oxide interface, and the second process occurring at the higher oxide/lower oxide interface is conversion of the lower As oxide to the higher As oxidation state. On InP(100), oxides corresponding to In2O3 and PO x are observed, and the respective photoelectron intensities follow a logarithmic growth as a function of UV‐ozone exposure time. Angle‐resolved XPSmeasurements show that the In2O3 and PO x are homogeneously mixed. The total oxide thickness, calculated from the photoelectron intensity ratio, follows a logarithmic growth as a function of exposure time on both GaAs(100) and InP(100).