On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifier

On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifier
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集成自愈式毫米波 CMOS 功率放大器的片上传感和驱动方法

DOI:
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发表时间:
2012
期刊:
IEEE MTT-S International Microwave Symposium Digest
影响因子:
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通讯作者:
A. Hajimiri
A. Hajimiri
中科院分区:
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文献类型:
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作者:
K. Sengupta;K. Dasgupta;S. Bowers;A. Hajimiri

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本文介绍了各种低功耗、紧凑型、低插入损耗传感器,这些传感器具有数字化ADC输出和数字控制驱动方法,可用于毫米波功率放大器的片上表征和修复。我们展示了低插入损耗(0.4dB)RF传感器,用于测量负载变化情况下的真实输入和输出功率,以及具有内置稳压器和热传感器的极低净空(10- 30 mV)DC传感器,作为测量PA效率的方法。所有传感器输出均由基于SAR的ADC进行数字化,以便与中央数字内核进行通信。本文还介绍了数字控制的组合器调谐和PA偏置驱动。该电路采用45 nm SOI CMOS实现,能够实现全片上数字控制的PA特性和驱动,功耗开销小于6%。
This paper presents various low power, compact, low insertion-loss sensors with digitized ADC output and digitally controlled actuation methods for on-chip characterization and healing of a mm-Wave power amplifier. We demonstrate low insertion loss (0.4dB) RF sensors which measure true input and output power in presence of load variations and very low-headroom (10–30mV) DC sensors with built-in regulators and thermal sensors as methods for measuring PA efficiency. All sensor outputs are digitized by a SAR-based ADC for communication with a central digital core. The paper also presents digitally controlled combiner tuning and PA bias actuation. The circuits are implemented in 45 nm SOI CMOS and enable full on-chip digitally controlled characterization and actuation of the PA with a power overhead of less than 6%.