Phosphorus-Doped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance
Phosphorus-Doped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance
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DOI：
10.1021/nl4001184
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发表时间：
2013-03-01
期刊：
影响因子：
10.8
通讯作者：
Kortshagen, Uwe R.
中科院分区：
文献类型：
--
作者：
Rowe, David J.;Jeong, Jong Seok;Kortshagen, Uwe R.
局部表面等离子体共振（LSPR）能够通过纳米材料的自由载流子浓度、形态和介电环境来定制纳米材料的光学响应。最近的努力，扩大可用的LSPR频率的光谱范围到红外成功地证明了掺杂半导体纳米晶体中的LSPR。尽管硅对于电子和光子应用的重要性，但是对于掺杂的硅纳米晶体还没有报道LSPR。在这里，我们展示了通过非热等离子体技术合成的掺杂硅纳米晶体，该技术在0.07-0.3 eV的能量范围内或600-2500 cm（-1）的中红外波数范围内表现出可调的LSPR。
Localized surface plasmon resonances (LSPRs) enable tailoring of the optical response of nanomaterials through their free carrier concentration, morphology, and dielectric environment. Recent efforts to expand the spectral range of usable LSPR frequencies into the infrared successfully demonstrated LSPRs in doped semiconductor nanocrystals. Despite silicon's importance for electronic and photonic applications, no LSPRs have been reported for doped silicon nanocrystals. Here we demonstrate doped silicon nanocrystals synthesized via a nonthermal plasma technique that exhibits tunable LSPRs in the energy range of 0.07-0.3 eV or mid-infrared wavenumbers of 600-2500 cm(-1).