Unoccupied Electronic State of SrTi1-xNbxO3 Observed by Inverse-Photoemission Spectroscopy
Unoccupied Electronic State of SrTi1-xNbxO3 Observed by Inverse-Photoemission Spectroscopy
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DOI：
10.1143/jjap.43.7623
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发表时间：
2004-11
影响因子：
1.5
通讯作者：
T. Higuchi;Y. Tezuka;T. Hattori;S. Yamaguchi;Shik Shin;T. Tsukamoto
中科院分区：
文献类型：
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作者：
T. Higuchi;Y. Tezuka;T. Hattori;S. Yamaguchi;Shik Shin;T. Tsukamoto
用逆光电子能谱（IPES）研究了Nb ~（5+）掺杂的SrTiO_3（SrTi_（1-x）Nb_xO_3）的空电子态。IPES谱具有三个特征，分别对应于Ti 3d态和Sr 4d态的t2 g-和eg-子带。IPES谱的峰位和带宽与标准谱带的计算结果符合得很好。t2 g-子带的强度随着Nb 5+浓度的增加而减小。这一发现表明，掺杂的电子进入的Ti 3d诱导的导带的底部。
The unoccupied electronic state of Nb5+-doped SrTiO3 (SrTi1-xNbxO3) has been studied by inverse-photoemission spectroscopy (IPES). The IPES spectra exhibit three features, which correspond to the t2g- and eg-subbands of the Ti 3d state and Sr 4d state. The peak positions and bandwidths of the IPES spectra are in good agreement with the standard band calculation. The intensity of the t2g-subband decreases with increasing Nb5+ concentration. This finding indicates that the doped electron enters the bottom of the Ti 3d-induced conduction band.