Molecular-beam epitaxy and lattice parameter of GaN x Sb 1- x : deviation from Vegard's law for x > 0.02
Molecular-beam epitaxy and lattice parameter of GaN x Sb 1- x : deviation from Vegard's law for x > 0.02
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GaN x Sb 1- x 的分子束外延和晶格参数：x > 0.02 时偏离 Vegard 定律
DOI：
10.1088/0022-3727/46/26/264003
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Ashwin M
中科院分区：
文献类型：
--
作者：
Ashwin M
采用高分辨X射线衍射（HRXRD）和二次离子质谱研究了一系列用分子束外延生长的GaNSb样品的N含量。两种方法测定的氮素含量在低氮组分时吻合较好（x< 0.01），在高氮组分时偏差较大（x> 0.02）。使用Vegard定律对HRXRD确定的晶格常数的分析低估了高N组合物的N含量。当x= 0.03时，低估率高达24%。晶格常数随N含量的变化是通过考虑间隙N-Sb复合物的密度随N含量的增加而上升的影响来模拟的。
The N content of a series of GaNSb samples grown by molecular-beam epitaxy is investigated using high-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectrometry. The N contents determined by the two methods agree well at lower N compositions (x< 0.01), and deviate significantly at larger N contents (x> 0.02). Analysis of the HRXRD-determined lattice constant using Vegard's law, underestimates the N content for high N compositions. The underestimation is found to be up to 24% for x= 0.03. The variation of the lattice parameter with N content is modelled by considering the influence of the density of the interstitial N–Sb complex rising with increasing N content.