Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis
Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis
复制标题
使用电热分析估算功率 Si MOSFET 的发热情况
DOI：
10.1115/ipack2013-73273
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Ishizuka
中科院分区：
文献类型：
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作者：
R. Kibushi;T. Hatakeyama;M. Ishizuka
本文介绍了功率硅MOSFET的热特性。亚微米尺度硅MOSFET的热点问题已经广为人知。近年来，功率硅MOSFET已成为汽车电子等许多领域的关键器件。在功率硅MOSFET中，施加高电压并产生大电流。因此，热量产生变得更高，热管理是重要的。本文用电热分析方法评价了功率硅MOSFET的热性能，并讨论了功率硅MOSFET温度对杂质的依赖关系。在高电场作用下，电子的热能大大高于晶格的热能。因此，本文考虑了电子与晶格之间的非平衡能态。计算结果表明，功率硅MOSFET中出现了热点。进一步研究了供体密度对热点温度的影响较大。ASME版权所有©2013
This paper describes thermal properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is a key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and impurity dependency of temperature of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equilibrium energy state between electron and lattice is considered. Calculated results showed that hot spot appears in power Si MOSFET. Further, it is investigated that the impact of donor density on hot spot temperature is strong.Copyright © 2013 by ASME