Extremely large magnetoresistance in boron-doped silicon
Extremely large magnetoresistance in boron-doped silicon
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DOI：
10.1103/physrevlett.100.127202
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发表时间：
2008-03-28
影响因子：
8.6
通讯作者：
Koopmans, B.
中科院分区：
文献类型：
--
作者：
Schoonus, J. J. H. M.;Bloom, F. L.;Koopmans, B.
制备了掺硼的Si-SiO2-Al结构，研究了其超大磁电阻效应。电流-电压特性表现出非线性行为，主要由碰撞电离的自催化过程。在低温下，磁场将碰撞电离的开始推迟到更高的电场。这导致400 kA/m时对称正MR超过10000%。施加磁场导致的受体水平相比，如由导纳谱推断的价带的增加。宏观输运模型被引入到描述如何控制的MR电压，电极间距，和氧化物厚度。
Boron-doped Si-SiO2-Al structures are fabricated to study extremely large magnetoresistance (MR) effects. Current-voltage characteristics show a nonlinear behavior, dominated by an autocatalytic process of impact ionization. At low temperatures, the magnetic field postpones the onset of impact ionization to higher electric fields. This results in a symmetric positive MR of over 10 000% at 400 kA/m. Applying a magnetic field leads to an increase of the acceptor level compared to the valence band as deduced by admittance spectroscopy. A macroscopic transport model is introduced to describe how the MR is controlled by voltage, electrode spacing, and oxide thickness.