Preparation of high‐Tc oxide superconductors at low substrate temperature by facing‐targets sputtering
Preparation of high‐Tc oxide superconductors at low substrate temperature by facing‐targets sputtering
复制标题
低温对靶溅射制备高Tc氧化物超导体
DOI：
10.1063/1.344692
复制
发表时间：
1990
影响因子：
3.2
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
T. Hirata;M. Naoe
在低衬底温度（Ts≤500°C）下，采用面靶溅射（FTS）系统制备了Y‐Ba‐Cu‐O薄膜。本研究采用MgO < 100 >和SrTiO3 < 110 >的底物。x射线衍射图表明，ft系统制备的Y - Ba - Cu - O薄膜呈四方相结晶。Y - Ba - Cu - O薄膜的组成与靶材基本一致。在FTS系统中，由于衬底处于无等离子体的位置，衬底上生长的薄膜不会受到高能粒子（如γ电子和负离子）的轰击。因此，薄膜组合物与靶材组合物之间的差异不会由于溅射而发生。最后，在约410°C的温度下，利用FTS系统获得了Y - Ba - Cu - O薄膜的高Tc氧化物超导体。薄膜表面非常光滑。薄膜成分与靶材成分无明显差异。Tc大约是85k。
Y‐Ba‐Cu‐O thin films were prepared at low substrate temperature (Ts≤500 °C) by a facing‐targets‐sputtering (FTS) system. MgO〈100〉 and SrTiO3〈110〉 substrates were used in this study. According to the x‐ray‐diffraction patterns, as‐deposited Y‐Ba‐Cu‐O thin films prepared by the FTS system crystallized in the tetragonal phase. The composition of the Y‐Ba‐Cu‐O thin films was almost the same as that of the targets. In the FTS system the growing film on the substrate would not be bombarded by high‐energy particles such as γ electrons and negative ions since the substrate is set in a plasma‐free position. Consequently, the difference between the film composition and that of the target does not occur due to resputtering. Finally, at a Ts of about 410 °C, high‐Tc oxide superconductors of Y‐Ba‐Cu‐O thin films were obtained by the FTS system. The film surfaces were very smooth. There was no difference between the film composition and that of the target. Tc was about 85 K.
DOI：
10.1007/bf01303701
发表时间：
1986-01-01
期刊：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER
影响因子：
--
作者：
BEDNORZ, JG;MULLER, KA
通讯作者：
MULLER, KA