Results with p-type pixel sensors with different geometries for the HL-LHC
Results with p-type pixel sensors with different geometries for the HL-LHC
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HL-LHC 具有不同几何形状的 p 型像素传感器的结果
DOI：
10.1016/j.nima.2013.03.034
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Allport P
中科院分区：
文献类型：
--
作者：
Allport P
像素探测器将广泛用于欧洲核子研究中心未来高亮度LHC（HL-LHC）升级后的ATLAS实验的四个最内层。像素传感器的总面积将超过5平方米。用于测量像素体积的硅传感器将不得不面临几个技术挑战。它们必须承受高达2× 10 16 n eq cm-2的剂量，在传感器边缘具有减小的非有源区域，仍然能够保持1000 V偏置电压，并且考虑到要覆盖的大面积，成本相对较低。在p型体上的N侧读出是满足各种要求的最有前途的技术。英国已经生产了几种传感器类型，用于各种读出系统，用于研究n-in-p和n-in-n传感器在用测试束和实验室测量照射之前和之后的特性。此处介绍了这些研究的现状。
Pixel detectors will be extensively used for the four innermost layers of the upgraded ATLAS experiment at the future High Luminosity LHC (HL-LHC) at CERN. The total area of pixel sensors will be over 5 m 2. The silicon sensors that will instrument the pixel volume will have to face several technology challenges. They will have to withstand doses up to 2× 10 16 n eq cm− 2, to have a reduced inactive area at the edge of the sensors still being able to hold 1000 V bias voltage and to be relatively low cost considering the large area to be covered. N-side readout on p-type bulk is the most promising technology for satisfying the various requirements. Several sensor types have been produced in the UK, conceived for various readout systems, for studying the properties of n-in-p and n-in-n sensors before and after irradiation with test beam and laboratory measurements. The status of these studies is presented here.
EUDET 望远镜的高分辨率平面结果
DOI：
10.1016/j.nima.2010.03.015
发表时间：
2010
影响因子：
1.4
作者：
A. Bulgheroni
通讯作者：
A. Bulgheroni
HERA 的高 $Q^2$ 喷流并使用 EUDET 像素望远镜测试光束测量
DOI：
10.3204/desy-thesis-2010-038
发表时间：
2010
影响因子：
1.4
作者：
J. Behr
通讯作者：
J. Behr