LINEWIDTH ANALYSIS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS QUANTUM-WELLS (X=0.09, 0.18, 1.0)
LINEWIDTH ANALYSIS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS QUANTUM-WELLS (X=0.09, 0.18, 1.0)
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DOI：
10.1103/physrevb.52.2784
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发表时间：
1995-07-15
影响因子：
3.7
通讯作者：
MARTELLI, F
中科院分区：
文献类型：
--
作者：
PATANE, A;POLIMENI, A;MARTELLI, F
在不同井宽L和铟浓度x的InxGa1-xAs/GaAs量子阱中进行了低温光致发光测量。将重空穴自由激子复合线的实验线宽与L和x的关系与现有的界面和合金无序模型进行了比较。在低L和高x处，界面无序性起着至关重要的作用。界面粗糙度的估定值与不同技术的估定值一致。
Photoluminescence measurements have been performed at low temperature in InxGa1-xAs/GaAs quantum wells with different well widths, L, and indium concentrations, x. The dependence df the experimental linewidth of the heavy-hole-free-exciton recombination lines on L and x has been compared with existing models of interface and alloy disorder. It has been demonstrated that interface disorder has a crucial role at low L and high x. The estimated values of the interface-roughness size agree well with those found by different techniques.