Polynomial splines for MOSFET model approximation
Polynomial splines for MOSFET model approximation
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DOI：
10.1109/43.3193
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发表时间：
1988-05
期刊：
影响因子：
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通讯作者：
J. Barby;J. Vlach;K. Singhal
中科院分区：
文献类型：
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作者：
J. Barby;J. Vlach;K. Singhal
研究了利用多项式样条函数逼近MOSFET非线性，以减少电路模型开发时间和模型仿真成本。在简单介绍样条函数后，将展示如何通过使用样条函数减少数字电路中MOSFET仿真模型的独立变量数量。沿着提出了一种生成样条曲线的表格公式，并给出了多项式样条曲线系数的存储缩减技术。数学规划问题的一维，二维和三维样条，结果在精确的单调样条使用几个部分。两个样条段被示出为在一维情况下提供足够的精度，而4*4和2*5*5段分别在二维和三维情况下提供足够的精度。>
The approximation of MOSFET nonlinearities by use of polynomial splines was investigated for reducing both circuit model development time and model simulation cost. After a brief tutorial on spline functions, it is shown how the number of independent variables for the MOSFET simulation models in digital circuits is reduced by their use. A tableau formulation for generating splines is presented along with a storage-reduction technique for polynomial spline coefficients. Mathematical programming problems for one-, two-, and three-dimensional splines are given that result in accurate monotonic splines using few segments. Two spline segments are shown to provide sufficient accuracy in the one-dimensional case, while 4*4 and 2*5*5 segments provide sufficient accuracy in the two- and three-dimensional cases, respectively. >