A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application
A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application
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DOI：
10.1088/0256-307x/30/3/037303
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发表时间：
2013-03
影响因子：
3.5
通讯作者：
Chang Hudong;Liu Guiming;Bing Sun;Wei Zhao;Wenxin Wang;Honggang Liu
中科院分区：
文献类型：
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作者：
Chang Hudong;Liu Guiming;Bing Sun;Wei Zhao;Wenxin Wang;Honggang Liu
我们展示了一种高性能无植入的n型In0.7Ga0.3As沟道MOSFET，该晶体管采用10nm Al2O3作为栅极介质，在半绝缘衬底上制备了4nm InP势垒层。通道的最大有效迁移率为1862 cm(2)/V。s是用分割C - V法提取的。栅极长度为0.8 μ m的器件表现出85mS/mm的峰值外部跨导和超过200mA/mm的驱动电流。该器件的短路电流增益截止频率f(T)为24.5 GHz，最大振荡频率f（max）为54 GHz。该研究有助于在射频应用中获得更高性能的0.7 ga0.3 as mosfet。
We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric. The maximum effective channel mobility is 1862 cm(2)/V.s extracted by the split C V method. Devices with 0.8 mu m gate length exhibit a peak extrinsic transconductance of 85mS/mm and a drive current of more than 200mA/mm. A short-circuit current gain cutoff frequency f(T) of 24.5 GHz and a maximum oscillation frequency f(max) of 54 GHz are achieved for the 0.8 mu m gate-length device. The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications.