Influence of Bias Voltage on the Structure of Lead Zirconate Titanate Piezoelectric Films prepared by Gas Flow Sputtering
Influence of Bias Voltage on the Structure of Lead Zirconate Titanate Piezoelectric Films prepared by Gas Flow Sputtering
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偏压对气流溅射制备锆钛酸铅压电薄膜结构的影响
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
H. Quenzer
中科院分区：
文献类型：
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作者：
K. Ortner;Denise R. Koessler;T. Jung;H. Jacobsen;H. Quenzer
该工作重点研究离子轰击对气流溅射锆钛酸铅（PZT）薄膜微观结构的影响。 PZT 是一种众所周知的压电材料，用于许多压电传感器和执行器应用。然而，快速、强大的机电驱动器（例如喷墨头）仍然需要 10 µm 厚度范围的薄膜。我们使用反应气流溅射技术 (GFS) 在铂和 Pt/TiO2 涂层硅片上高速沉积 PZT 薄膜。使用分段纯金属靶材将化学计量调整至接近同形相界 Pb(Zr0.52Ti0.48)O3。生长过程中的基底温度为680°C，并且以高达120 nm · min−1的沉积速率制备薄膜。通过X射线衍射验证了钙钛矿晶相，并对晶粒尺寸进行了研究。通过 SEM 研究层形貌，证明薄膜基本没有裂纹和缺陷。
The work focuses on the influence of ion bombardment on the microstructure of gas flow sputtered lead zirconate titanate (PZT) films. PZT is a well-known piezoelectric material used in many piezoelectric sensor and actuator applications. However, films in the 10 µm thickness region are still in demand for fast and powerful electromechanical drives (e.g. inkjet head). We used the reactive gas flow sputtering technique (GFS) for the high-rate deposition of PZT thin films on platinum- and on Pt/TiO2-coated silicon wafers. The stoichiometry was adjusted to be near the morphotropic phase boundary Pb(Zr0.52Ti0.48)O3 using segmented pure metallic targets. A substrate temperature of 680 °C during growth was applied and the films were prepared with a deposition rate of up to 120 nm · min−1. The perovskite crystalline phase was verified by X-ray diffraction and studies on grain sizes have been performed. The layer morphology was investigated by SEM and films were proved to be mostly crack- and defect-free.