CMOS differential-capacitance-to-frequency converter utilising repetitive charge integration and charge conservation
CMOS differential-capacitance-to-frequency converter utilising repetitive charge integration and charge conservation
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DOI：
10.1049/el.2010.3416
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发表时间：
2010-04
影响因子：
1.1
通讯作者：
Hyunjoong Lee;J. Woo;Suhwan Kim
中科院分区：
文献类型：
--
作者：
Hyunjoong Lee;J. Woo;Suhwan Kim
提出了一种用于读出单片集成差分电容传感器的低复杂度CMOS电路。它通过反复电荷积分和电荷守恒产生的电荷的累积，将MEMS传感器件的差分电容直接转换为频率。采用0.35 μm CMOS工艺设计并制作了原型芯片。实验结果表明，差分电容与输出频率呈线性关系。
A low-complexity CMOS circuit is proposed for reading out monolithically integrated differential capacitive sensors. It directly converts the differential capacitance of a MEMS sensing device to a frequency by accumulating the charges produced by repeated charge integration and charge conservation. A prototype chip has been designed and fabricated in 0.35 μm CMOS technology. Experimental results show that differential capacitance is linearly converted to output frequency.