1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature.
1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature.
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DOI：
10.1364/oe.22.022608
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发表时间：
2014-09
期刊：
影响因子：
3.8
通讯作者：
X. Meng;C. Tan;S. Dimler;J. David;J. Ng
中科院分区：
文献类型：
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作者：
X. Meng;C. Tan;S. Dimler;J. David;J. Ng
研制了InGaAs/InAlAs单光子雪崩二极管，并对其特性进行了研究。在260~290K温度范围内对器件进行了漏电流、暗计数和光子计数测量，由于InAlAs对雪崩击穿具有较好的温度稳定性，在所研究的30K温度范围内，器件的击穿电压变化了<；0.2V，对应的击穿电压温度系数小于7 mV/K。在选通模式下，260和290K时的单光子探测效率分别为21%和10%。然而，由于InAlAs雪崩区的带间隧道电流过大，暗计数率很高。
An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of breakdown voltage less than 7 mV/K. The single photon detection efficiency achieved in gated mode was 21 and 10% at 260 and 290 K, respectively. However the dark count rates were high due to excessive band-to-band tunneling current in the InAlAs avalanche region.