Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr0.52Ti0.48)O3 thin films
Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr0.52Ti0.48)O3 thin films
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DOI：
10.1063/1.1786662
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发表时间：
2004-08
影响因子：
4
通讯作者：
Wenbin Wu;Yi Wang;G. Pang;K. Wong;C. Choy
中科院分区：
文献类型：
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作者：
Wenbin Wu;Yi Wang;G. Pang;K. Wong;C. Choy
研究了PZT(PZT)电容器中晶格失配应变对PZT电容器工艺诱导压痕行为的影响。采用不同的氧化物电极，通过改变沉积氧压，在外延PZT薄膜中产生了不同的晶格失配应变。研究发现，在低氧压下原位退火后，随着失配应变的增加，电容器的极化-电场磁滞回线中的电压偏移量增加，与所采用的氧化物电极无关，而底部界面的晶格无序可以有效地消除电压漂移。我们的结果表明，压痕行为是由于生长温度下失配应变弛豫产生的位错导致的氧损失造成的。
The effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr0.52Ti0.48)O3 (PZT) capacitors with Pt (top), and SrRuO3, La0.7Sr0.3MnO3 or LaNiO3 (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.