Impact of Short Channel Effects on Detection of Terahertz Radiation in Silicon Nanowire MOSFETs

Impact of Short Channel Effects on Detection of Terahertz Radiation in Silicon Nanowire MOSFETs
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DOI：
10.1364/acpc.2017.su2a.157
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发表时间：
2017-11
期刊：
2017 Asia Communications and Photonics Conference (ACP)
影响因子：
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通讯作者：
Guangjin Ma;G. Hu;Chunlai Li;Ying Yu;Zhiping Zhou;Jin He
Guangjin Ma;G. Hu;Chunlai Li;Ying Yu;Zhiping Zhou;Jin He
中科院分区：
其他
文献类型：
--
作者：
Guangjin Ma;G. Hu;Chunlai Li;Ying Yu;Zhiping Zhou;Jin He

文献摘要

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研究了硅纳米线MOSFET等离子体波探测太赫兹辐射的特性，特别是几何参数。结果将指导太赫兹探测器的优化设计。
Characteristic especially geometrical parameters have been investigated for the detection of terahertz radiation by plasma waves in silicon nanowire MOSFETs. Results will guide towards optimum design of a terahertz detector.