Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
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金属有机气相外延生长的含铝层上 GaInNAs 量子阱的形态不稳定性
DOI：
10.1063/1.1567810
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发表时间：
2003
影响因子：
4
通讯作者：
M. Hammar
中科院分区：
文献类型：
--
作者：
P. Sundgren;C. Asplund;K. Baskar;M. Hammar
报道了金属有机气相外延生长的GaInNAs/GaAs单量子阱在AlGaAsGaAsDBR上的光学和结构完整性。用原子力显微镜测量了不同DBR周期数和不同DBR生长温度下的光致发光和表面形貌。DBR周期的增加可能会严重降低量子阱表面的形貌和光致发光。表面二次离子质谱仪显示了一种含铝物种的表面偏析。降低DBR生长温度降低了Al的表面浓度，改善了GaInNAs量子阱的形貌。
We report on the optical and structural integrity of metalorganic vapor-phase epitaxy-grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Photoluminescence and surface morphology as measured by atomic force microscopy were investigated for different numbers of DBR periods and different DBR-growth temperatures. An increasing number of DBR periods may severely degrade the quantum well surface morphology and photoluminescence. Surface secondary-ion mass spectroscopy revealed surface segregation of an Al-containing species. Decreasing the DBR-growth temperature lowers the surface concentration of Al and improves the GaInNAs quantum-well morphology.