Magnetic properties and spin polarization of Co2MnSi Heusler alloy thin films epitaxially grown on GaAs(001) -: art. no. 144416
Magnetic properties and spin polarization of Co2MnSi Heusler alloy thin films epitaxially grown on GaAs(001) -: art. no. 144416
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DOI：
10.1103/physrevb.71.144416
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发表时间：
2005-04-01
影响因子：
3.7
通讯作者：
Kirschner, J
中科院分区：
文献类型：
--
作者：
Wang, WH;Przybylski, M;Kirschner, J
采用脉冲激光沉积法（PLD）在GaAs（001）衬底上生长了Co2 MnSi Heusler合金单晶薄膜。在450 K下沉积的Co2 MnSi薄膜的结晶质量最好。薄膜表现出面内单轴磁各向异性，其易磁化轴沿着[1-10]方向叠加有易磁化轴沿着的四重各向异性< 110 >。单晶Co2 MnSi薄膜的自旋分辨光电子能谱测量揭示了自旋分辨态密度与最近的能带结构计算定性一致。接近费米能级的光电子的自旋极化被发现是最多12%，与预测的半金属行为相反。我们认为，这些差异可能是由于部分化学无序的Co2 MnSi晶格。
Single-crystalline Co2MnSi Heusler alloy films have been grown on GaAs(001) substrates by pulsed laser deposition (PLD). The best crystallographic quality of the Co2MnSi films has been achieved after deposition at 450 K. The films exhibit in-plane uniaxial magnetic anisotropy with the easy axis of magnetization along the [1-10] direction superimposed with a fourfold anisotropy with the easy axis along < 110 >. Spin-resolved photoemission measurements of the single-crystalline Co2MnSi films reveal a spin-resolved density of states that is in qualitative agreement with recent band structure calculations. The spin polarization of photoelectrons close to the Fermi level is found to be at most 12%, in contrast to the predicted half-metallic behavior. We suggest that these discrepancies may be attributed to a partial chemical disorder in the Co2MnSi lattice.