Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit
Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit
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功率因数校正电路中 Si 衬底上 AlGaN/GaN 异质结构场效应晶体管的评估
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
A. Iwabuchi
中科院分区：
文献类型：
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作者：
Shinichi Iwakami;O. Machida;Y. Izawa;Ryohei Baba;M. Yanagihara;T. Ehara;N. Kaneko;H. Goto;A. Iwabuchi
提出了一种新的Si衬底上大功率AlGaN/GaN异质结场效应晶体管（HFET）器件。首次提出了它在功率因数校正（PFC）电路中的应用.在栅宽为152 mm的Si衬底上制备的AlGaN/GaN HFET的击穿电压大于800 V，导通电阻为65 mΩ，最大漏电流大于50 A。至于PFC在200 W和f = 109 kHz下的实验结果，获得了95.2%的功率转换效率。该值比使用PFC电路的Si器件的值高约1%。
A new device of high-power AlGaN/GaN heterostructure field-effect transistors (HFETs) fabricated on a Si substrate is proposed. Its application of the power factor correction (PFC) circuit is presented for the first time. The AlGaN/GaN HFETs fabricated on the Si substrate with a gate width of 152 mm exhibited a breakdown voltage of more than 800 V, an on-resistance of 65 mΩ, and a maximum drain current of more than 50 A. As for the results of the experiment on the PFC at 200 W and f = 109 kHz, a power conversion efficiency of 95.2% was obtained. This value was about 1% higher than that of the PFC-circuit-using Si devices.