Self-assembly of single thin Au nanoparticle chains on Si along V-groove-etched lines between micrometre-distant electrodes by dielectrophoresis
Self-assembly of single thin Au nanoparticle chains on Si along V-groove-etched lines between micrometre-distant electrodes by dielectrophoresis
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DOI：
10.1088/0957-4484/18/34/345608
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发表时间：
2007-08
期刊：
影响因子：
3.5
通讯作者：
A. Zoy;A. Nassiopoulos;A. Nassiopoulou
中科院分区：
文献类型：
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作者：
A. Zoy;A. Nassiopoulos;A. Nassiopoulou
在这项研究中，我们研究了使用交流电场和介电电泳技术，在微米距离电极之间的氧化平面或 V 形槽蚀刻的硅基板上自组装具有柠檬酸盐稳定作用的 40 nm 尺寸的金胶体纳米颗粒。我们证明，通过形成垂直于金电极的微米宽的 V 形凹槽线来对 Si 表面进行预图案化，有利于沿着 V 形凹槽蚀刻线形成单个纳米颗粒链。因此，在集成电极之间的氧化硅上形成了长度为 1-10 µm 的单薄（~100-200 nm 厚）Au 纳米颗粒链。详细研究了施加的电压和电场频率对纳米颗粒链的影响。通过考虑电极之间的电场分布来解释沿 V 形槽的选择性生长。通过扫描电子显微镜和电流-电压测量对样品进行表征。获得的金纳米粒子链具有导电性，在生物分子传感方面的应用很有趣。
In this study we investigated the self-assembly of 40 nm size Au colloidal nanoparticles with citrate stabilization on oxidized flat or V-groove-etched Si substrates between micrometre-distant electrodes using an ac electric field and the technique of dielectrophoresis. We demonstrated that pre-patterning of the Si surface by forming micrometre-wide V-groove lines perpendicular to the gold electrodes facilitates single nanoparticle chain formation along the V-groove-etched lines. Single thin (∼100–200 nm thick) Au nanoparticle chains 1–10 µm in length were thus formed on oxidized Si between integrated electrodes. The effect of the applied voltage and frequency of the electric field on nanoparticle chaining was investigated in detail. The selective growth along the V-grooves was interpreted by considering the electric field distribution between the electrodes. The samples were characterized by scanning electron microscopy and current–voltage measurements. The Au nanoparticle chains obtained were conductive and are interesting for applications in biomolecule sensing.