Monte Carlo simulation of full energy spectrum of electrons emitted from silicon in Auger electron spectroscopy
Monte Carlo simulation of full energy spectrum of electrons emitted from silicon in Auger electron spectroscopy
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俄歇电子能谱中硅发射电子全能谱的蒙特卡罗模拟
DOI：
10.1002/sia.5682
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发表时间：
2015-01-01
影响因子：
1.7
通讯作者：
Ding, Z. J.
中科院分区：
文献类型：
--
作者：
Cao, N.;Da, B.;Ding, Z. J.
采用Monte Carlo方法模拟了表面激发、俄歇电子和二次电子的产生，计算了俄歇电子能谱（AES）中硅发射电子的能谱，覆盖了从弹性峰到真实二次电子峰的全部能量范围。这项工作的目的是提供一个更全面的了解实验AES光谱整合的最新知识的电子散射和电子激发附近的固体表面区域。束-样品相互作用的Monte Carlo模拟模型包括Casnati电离截面下俄歇电子产生的原子电离和弛豫、表面等离子体激发和体等离子体激发以及电子非弹性散射的体电子激发（包括初级电子、俄歇电子和次级电子）通过介电功能方法，电子非弹性散射事件中的级联二次电子产生，以及使用Mott截面的电子弹性散射。Si样品的模拟能谱很好地描述了用柱面镜分析器测量的实验AES EN（E）谱，初级能量范围为500 - 3000 eV。表面激发对损耗峰的形状、弹性峰和俄歇峰的强度影响较大，对低能背散射本底的影响较小，对高能背散射本底和俄歇电子峰的形状影响较小。版权所有（c）2014约翰威利父子有限公司
A Monte Carlo simulation including surface excitation, Auger electron- and secondary electron production has been performed to calculate the energy spectrum of electrons emitted from silicon in Auger electron spectroscopy (AES), covering the full energy range from the elastic peak down to the true-secondary-electron peak. The work aims to provide a more comprehensive understanding of the experimental AES spectrum by integrating the up-to-date knowledge of electron scattering and electronic excitation near the solid surface region. The Monte Carlo simulation model of beam-sample interaction includes the atomic ionization and relaxation for Auger electron production with Casnati's ionization cross section, surface plasmon excitation and bulk plasmon excitation as well as other bulk electronic excitation for inelastic scattering of electrons (including primary electrons, Auger electrons and secondary electrons) through a dielectric functional approach, cascade secondary electron production in electron inelastic scattering events, and electron elastic scattering with use of Mott's cross section. The simulated energy spectrum for Si sample describes very well the experimental AES EN(E) spectrum measured with a cylindrical mirror analyzer for primary energies ranging from 500eV to 3000eV. Surface excitation is found to affect strongly the loss peak shape and the intensities of the elastic peak and Auger peak, and weakly the low energy backscattering background, but it has less effect to high energy backscattering background and the Auger electron peak shape. Copyright (c) 2014 John Wiley & Sons, Ltd.