Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration
Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration
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DOI：
10.1587/transele.e99.c.339
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发表时间：
2016-03-01
影响因子：
0.5
通讯作者：
Sawada, Renshi
中科院分区：
文献类型：
--
作者：
Higurashi, Eiji;Yamamoto, Michitaka;Sawada, Renshi
光电芯片（例如激光二极管（LD）和光电二极管（PD）芯片）的低温键合方法一直是开发高性能和紧凑型光电器件（例如微传感器和通信模块）的焦点。本文演示了在环境空气中使用氩气和氢气混合气体大气压等离子体将带有金薄膜的光电芯片与具有光滑表面（R-a：1.3 nm）的金凸块进行室温键合。芯片剪切强度足够高，超过了 MIL-STD-883F、方法 2019 (x2) 的强度要求。 LD芯片的亮电流-电压特性和PD芯片的暗电流-电压特性的测量结果表明，接合后没有退化。
Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (R-a: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.