Electric-field control of domain wall motion in perpendicularly magnetized materials
Electric-field control of domain wall motion in perpendicularly magnetized materials
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DOI：
10.1038/ncomms1848
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发表时间：
2012-05-01
影响因子：
16.6
通讯作者：
Koopmans, B.
中科院分区：
文献类型：
--
作者：
Schellekens, A. J.;van den Brink, A.;Koopmans, B.
垂直磁各向异性材料中的畴壁运动由于其在未来自旋电子器件中的巨大潜力而一直是深入研究的主题。最近，已经表明薄膜的垂直各向异性可以受到电场的影响。电压控制的磁开关已经实现，这被设想为导致低功率逻辑和存储器设备。在这里，我们展示了一个全新的应用这种效果，即控制畴壁运动的电场。我们表明，施加的电压垂直于Co或CoB线可以显着增加或减少畴壁速度。超过一个数量级的速度修改被证明（从0.4到4 μ m/s（-1）），提供了第一步电畴壁设备的控制。这开辟了通过电场以极低的功率成本实时和局部控制畴壁运动的可能性。
Domain wall motion in materials exhibiting perpendicular magnetic anisotropy has been the subject of intensive research because of its large potential for future spintronic devices. Recently, it has been shown that perpendicular anisotropy of thin films can be influenced by electric fields. Voltage-controlled magnetic switching has already been realized, which is envisioned to lead to low-power logic and memory devices. Here we demonstrate a radically new application of this effect, namely control of domain wall motion by electric fields. We show that an applied voltage perpendicular to a Co or CoB wire can significantly increase or decrease domain wall velocities. Velocity modification over an order of magnitude is demonstrated (from 0.4 to 4 mu m s(-1)), providing a first step towards electrical control of domain wall devices. This opens up possibilities of real-time and local control of domain wall motion by electric fields at extremely low power cost.