Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities
Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities
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DOI：
10.1016/s0022-0248(98)00191-2
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发表时间：
1998-06
影响因子：
1.8
通讯作者：
Naotaka Kuroda;C. Sasaoka;A. Kimura;A. Usui;Y. Mochizuki
中科院分区：
文献类型：
--
作者：
Naotaka Kuroda;C. Sasaoka;A. Kimura;A. Usui;Y. Mochizuki
