Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure
Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure
复制标题
通过定制界面电子结构来修改量子阱态的相移来切换磁性
DOI：
10.1103/physrevb.101.014410
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
and Tetsuya Sato
中科院分区：
文献类型：
--
作者：
Shunsuke Sakuragi;Hiroyuki Kageshima;and Tetsuya Sato
我们证明了控制的Pd（100）的磁性的薄膜，显示电子量子阱诱导的铁磁性，通过调制的界面电子状态，使用密度泛函计算。从基于相模型的分析，形成的Au/Pd（100）界面诱导的电子量子阱态的波函数的杂化，并调制作为倒易晶格点的函数的散射相移的项。相反，形成只有费米能级的电子的Al界面不能改变散射相移。我们的发现表明，通过利用波函数的杂交来定制界面电子态来修改相移的可能性，这有效地改变了钯膜费米能附近的态密度，并且顺磁性和铁磁性之间的切换基于铁磁性的条件（斯通纳准则）。
We demonstrate control of the magnetism of Pd(100) ultrathin films, which show-electron quantum-well-induced ferromagnetism, via modulation of the interface electronic state using density functional calculation. From an analysis based on the phase model, forming the Au/Pd(100) interface induces hybridization of the wave function of-electron quantum-well states, and modulates the term of the scattering phase shift as a function of the reciprocal lattice point. In contrast, forming the Al interface, which has onlyelectrons at the Fermi energy, cannot modify the scattering phase shift. Our finding indicates the possibility of modifying the phase shift by tailoring the interface electronic states using hybridization of the wave function, and this efficiently changes the density of states near the Fermi energy of Pd films, and the switching between paramagnetism and ferromagnetism occurs based on the condition for ferromagnetism (Stoner criterion).