Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
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DOI：
10.4028/www.scientific.net/msf.615-617.27
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发表时间：
2009-03
期刊：
影响因子：
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通讯作者：
Kazuaki Seki;R. Tanaka;T. Ujihara;Y. Takeda
中科院分区：
文献类型：
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作者：
Kazuaki Seki;R. Tanaka;T. Ujihara;Y. Takeda
我们研究了溶液生长工艺对生长在(111)3C-SiC籽晶上的晶体的多型性和晶体质量的影响。尽管使用了3C-SiC种子晶体，但由于3C-SiC的(111)晶面与6H-SiC的(0001)晶面相似，容易发生堆积误差，所以生长的晶体的多晶型从3C-SiC转变为6H-SiC。此外，6H-碳化硅晶体的生长影响了籽晶的质量，即在籽晶生长过程中产生了高密度的堆积层错。
We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.