A trench lateral power MOSFET using self-aligned trench bottom contact holes
A trench lateral power MOSFET using self-aligned trench bottom contact holes
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DOI：
10.1109/iedm.1997.650399
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发表时间：
1997-12
期刊：
影响因子：
--
通讯作者：
N. Fujishima;C. Salama
中科院分区：
文献类型：
--
作者：
N. Fujishima;C. Salama
提出了一种新型沟槽横向功率MOSFET（T-LPM）结构及其制作工艺。栅极、沟道和漂移区建立在沟槽的侧壁上。该工艺使用自对准沟槽底部接触孔到漏极，以实现最小间距和非常低的导通电阻。具有80 V击穿电压的T-LPM具有4 /spl mu/m的单元间距，其约为常规横向功率MOSFET（C-LPM）的一半。对于80 V击穿，T-LPM和C-LPM的比导通电阻分别为0.8 m/spl Ω/-cm/sup 2/和1.6 m/spl Ω/-cm/sup 2/。
A novel Trench Lateral Power MOSFET (T-LPM) structure and its fabrication process are presented in this paper. The gate, channel, and the drift region are built on the side-wall of the trench. The process uses self-aligned trench bottom contact holes to the drain to achieve minimum pitch and very low on-resistance. A T-LPM, with 80 V breakdown voltage, has a cell pitch of 4 /spl mu/m which is about half that of the Conventional Lateral Power MOSFETs (C-LPM). The specific on-resistances for the T-LPM and C-LPM are 0.8 m/spl Omega/-cm/sup 2/ and 1.6 m/spl Omega/-cm/sup 2/ respectively for a 80 V breakdown.