Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications
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DOI：
10.1007/s12633-021-01199-w
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发表时间：
2021-06
期刊：
影响因子：
3.4
通讯作者：
J.S. Raj Kumar;D. Nirmal;M. Hooda;Surinder Singh;J. Ajayan;L. Arivazhagan
中科院分区：
文献类型：
--
作者：
J.S. Raj Kumar;D. Nirmal;M. Hooda;Surinder Singh;J. Ajayan;L. Arivazhagan
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is designed and simulated using the Synopsys TCAD tool. A comprehensive analysis of the impact of field plate lengths on the RF/DC performance of 250 nm gate AlGaN/GaN HEMT on Si wafer is carried out at 300 K and the device exhibit a peak drive current of 140 mA/mm at VGS= 1 V. The 250 nm gate device also achieve an electron mobility and 2DEG density of 1450 cm2/Vs and 8.5 × 1012/cm2respectively. 250 nm gate GaN HEMT on Si wafer with a field plate length of 0.5 μm, 1 μm and 2 μm exhibit a breakdown voltage/fTof 200 V/145 GHz, 370 V/125 GHz and 440 V/100 GHz respectively. The optimized device structure exhibits high power performance without degrading the RF performance which makes them a suitable device technology for future high power RF applications.
