Measurement Techniques for RF Nanoelectronic Devices: New Equipment to Overcome the Problems of Impedance and Scale Mismatch
Measurement Techniques for RF Nanoelectronic Devices: New Equipment to Overcome the Problems of Impedance and Scale Mismatch
复制标题
射频纳米电子器件的测量技术：克服阻抗和尺度失配问题的新设备
DOI：
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发表时间：
2014
影响因子：
3.6
通讯作者：
G. Dambrine
中科院分区：
文献类型：
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作者：
H. Happy;K. Haddadi;D. Théron;T. Lasri;G. Dambrine
新材料（纳米线、纳米管、石墨烯带和薄膜）和纳米尺寸器件的出现，使得有必要开发专用技术，以实现在高频范围内的电气特性。在这篇文章中，两种可能的观点已经强调，以解决高阻抗纳米器件的测量问题。第一种解决方案是基于在同一芯片上集成高阻抗反射计和纳米级器件。已成功地测量了一个单一的碳纳米管的微波阻抗高达6 GHz使用这种技术。第二种解决方案包括在传统VNA和高阻抗器件之间插入可调微波干涉仪。干涉仪允许将待测量的阻抗调整到测量系统的最高测量灵敏度。特别是，电容下降到0.35 fF已被测量的误差估计为小于10%，使用干涉技术结合扫描微波显微镜。这些关于单端口纳米器件的概念证明为具有高阻抗的双端口有源器件的情况开辟了道路。下一代纳米器件制造的进步将取决于我们在宽频率范围内准确和可重复地测量纳米级范围内的电特性和性能特征的能力。
The emergence of new materials (nanowires, nanotubes, graphene tapes, and thin films) and devices with nanoscale dimensions give rise to the necessity for developing dedicated techniques that will allow their electrical characterization at high-frequency range. In this article, two possible views have been highlighted to tackle the issue of the measurement of high-impedance nanoscale devices. The first solution is based on the integration of a high-impedance reflectometer and a nanoscale device on the same chip. The microwave impedance of a single CNT has been successfully measured up to 6 GHz using this technique. The second solution consists of inserting an adjustable microwave interferometer between a traditional VNA and the high-impedance device. The interferometer allows adjustment of the impedance to be measured to the highest measurement sensitivity of the measurement system. In particular, capacitances down to 0.35 fF have been measured with an error estimated to be less than 10% using the interferometric technique combined with a scanning microwave microscope. These proofs of concept on one-port nanodevices open the route towards the case of two-port active devices with high impedance. Advances in the manufacturing of next-generation nanodevices will depend on our ability to measure electrical properties and performance characteristics accurately and reproducibly at the nanoscale regime over a broad frequency range.