Single-electron-phonon interaction in a suspended quantum dot phonon cavity.
Single-electron-phonon interaction in a suspended quantum dot phonon cavity.
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DOI：
10.1103/physrevlett.92.046804
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发表时间：
2003-04
影响因子：
8.6
通讯作者：
E. Weig;R. Blick;Tobias Brandes;J. Kirschbaum;Werner Wegscheider;M. Bichler;J. Kotthaus
中科院分区：
文献类型：
--
作者：
E. Weig;R. Blick;Tobias Brandes;J. Kirschbaum;Werner Wegscheider;M. Bichler;J. Kotthaus
由嵌入独立式 GaAs/AlGaAs 膜中的量子点组成的电子声子腔在低温下使用库仑阻塞测量进行表征。我们发现零偏压附近的单电子隧道效应被完全抑制，导致输运谱中能隙的形成。观察到的效应是由限制在腔内的局域声子模式的激发引起的。这种声子传输封锁在离散磁场中被解除，其中具有非零角动量的较高电子态与声子能量产生共振。
An electron-phonon cavity consisting of a quantum dot embedded in a freestanding GaAs/AlGaAs membrane is characterized using Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at discrete magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy.