Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
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DOI：
10.1016/s0022-0248(03)01235-1
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发表时间：
2003-07
影响因子：
1.8
通讯作者：
Jie Chen;S. Zhang;Bingxing Zhang;Juntao Zhu;G. Feng;X. Shen;Y. Wang;H. Yang;W. Zheng
中科院分区：
文献类型：
--
作者：
Jie Chen;S. Zhang;Bingxing Zhang;Juntao Zhu;G. Feng;X. Shen;Y. Wang;H. Yang;W. Zheng
