Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge
Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge
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DOI：
10.1016/j.tsf.2003.12.013
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发表时间：
2004-06-01
期刊：
影响因子：
2.1
通讯作者：
Iizuka, S
中科院分区：
文献类型：
--
作者：
Ikada, R;Nishimura, G;Iizuka, S
提出了一种产生高密度、低电子温度等离子体的方法。在等离子体增强化学气相沉积中，电子温度影响沉积膜的质量，因此需要低电子温度的等离子体来减少过量的解离自由基。在这里，栅极偏置方法进行修改和改进，以产生高电子密度和低电子温度的等离子体，以增加沉积速度。结果，电子温度降低了0.1- 0.5eV，电子密度从10（9）cm ~（-3）提高到2 × 10（11）cm ~（-3）左右。(C)2003 Elsevier B. V.保留所有权利。
A noble method for the production of high density and low electron temperature plasma is presented. In plasma enhanced chemical vapor depositions, electron temperature affects the quality of deposited films, so a low-electron-temperature plasma is required to reduce excess dissociated radicals. Here, a grid-biasing method is modified and improved to produce high-electron-density and low-electron-temperature plasmas to increase deposition speed. As a result, the electron temperature is lowered in a range of 0.1-0.5 eV and the electron density is raised from the order of 10(9) to similar to2 X 10(11) cm(-3). (C) 2003 Elsevier B.V. All rights reserved.