Tunable spin junction
Tunable spin junction
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可调谐自旋结
DOI：
10.1063/1.3132082
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发表时间：
2009
影响因子：
4
通讯作者：
H. Dery
中科院分区：
文献类型：
--
作者：
Pengke Li;H. Dery
我们提出了一种跨混合半导体/铁磁体系统（例如 GaAs/AlGaAs/GaAs/Fe）界面区域双势垒结构的传输理论。当电子流向铁磁体（正向偏置）时，这种结构的电流-电压（I-V）曲线中会出现两个峰值。第一个峰值是由于谐振隧道二极管的典型行为引起的，第二个峰值是由于局域态之间的谐振条件引起的。电流的自旋极化在两个峰中具有相反的符号。在这样的方案中，偏置控制自旋电流的大小和符号。
We present a theory of transport across a double barrier structure at the interface region of a hybrid semiconductor/ferromagnet system (e.g., GaAs/AlGaAs/GaAs/Fe). When electrons flow to the ferromagnet (forward bias), two peaks appear in the current-voltage (I-V) curve of such a structure. The first peak is due to a typical behavior in resonant tunneling diodes and the second peak is due to resonance conditions between localized states. The spin polarization of the current has opposite sign in the two peaks. In such a scheme, the bias controls the magnitude and sign of the spin current.