Resonant Auger-decay process in solid SiO2 at the Si 1s edge.
Resonant Auger-decay process in solid SiO2 at the Si 1s edge.
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Si 1s 边缘处固体 SiO2 中的共振俄歇衰变过程。
DOI：
10.1103/physrevb.49.709
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Yamamoto
中科院分区：
文献类型：
--
作者：
Baba;Sasaki;Yamamoto
利用同步辐射研究了SiO2中Si 1s边共振和非共振激发后的俄歇衰变过程。发现当光子能量接近Si的1s→ 3p共振能量时，Si的KL 2，3 L 2，3俄歇线分裂为两个峰。这两个峰归因于正常和共振俄歇衰变过程。还观察到共振俄歇峰与光子能量成比例地向更高的能量移动。共振俄歇峰归因于Si 1s→ 3p激发后的旁观者俄歇衰变。共振俄歇电子的能量转移解释的能量转移从激发的电子在导带中的俄歇电子的过程中的俄歇衰变过程。
The Auger-decay processes in solid SiO 2 after resonant and off-resonant excitations around the Si 1s edge have been investigated using synchrotron radiation. It was found that the Si KL 2, 3 L 2, 3 Auger line splits into two peaks when the photon energy is close to that of the Si 1s→ 3p resonance. These two peaks are ascribed to the normal and resonant Auger-decay processes. It was also observed that the resonant Auger peak is shifted to higher energy in proportion to the photon energy. The resonant Auger peak is attributed to the spectator Auger decay following the Si 1s→ 3p excitation. The energy shift of the resonant Auger electron is interpreted in terms of the energy transfer from the excited electron in the conduction band to the Auger electron in the course of the Auger-decay process.