Mechanism of phosphorus pile‐up in the Si‐SiO2 interface
Mechanism of phosphorus pile‐up in the Si‐SiO2 interface
复制标题
Si-SiO2界面磷堆积机理
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
Y. Ōsaka
中科院分区：
文献类型：
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作者：
T. Kimura;M. Hirose;Y. Ōsaka
利用俄歇深度分析技术系统地研究了多晶 Si-SiO2 界面中的磷堆积。堆积程度比单晶 Si-SiO2 界面的堆积程度小一个数量级。研究发现，当体积浓度超过 5×1019 cm−3 时，多晶体系中磷原子的堆积密度达到饱和，而单晶 Si 体系则没有饱和。这种显着的差异可以根据界面中存在的应变场的差异来解释。
Phosphorus pile‐up in the polycrystalline Si‐SiO2 interface has systematically been studied by using Auger in‐depth profiling technique. The extent of pile‐up is one order of magnitude less than that in the single crystal Si‐SiO2 interface. It was found that the density of pile‐up phosphorus atoms saturates in the polycrystalline system when the bulk concentration exceeds 5×1019 cm−3, despite no saturation for the single crystal Si system. This pronounced difference was interpreted in terms of the difference in the strain field present in the interface.