1.55-µm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
1.55-µm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate
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GaAs 衬底上制造的 Sb 基量子点垂直腔表面发射激光器结构的 1.55 µm 波段发射
DOI：
10.1143/jjap.45.3423
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
N. Ohtani
中科院分区：
文献类型：
--
作者：
N. Yamamoto;K. Akahane;S. Gozu;A. Ueta;N. Ohtani
我们开发了基于锑的量子点垂直腔表面发射激光器（Sb 基 QD-VCSEL）结构，适用于 1.3 和 1.55 µm 光通信波段。它们是在（001）取向的 GaAs 基板上制造的，并且由于使用硅原子辐照而包含高密度 InGaSb QD 作为活性介质。测试表明，在室温下光泵浦和电流注入条件下，它们在连续波操作中具有约 1.55 µm 的光通信波段发射峰值。此外，还发现这些基于 Sb 的 QD-VCSEL 在发射强度与光泵浦功率和电流方面均具有阈值特性。
We have developed antimonide-based quantum-dot vertical-cavity surface-emitting laser (Sb-based QD-VCSEL) structures for operation in the 1.3 and 1.55 µm optical communication wavebands. They were fabricated on a (001)-oriented GaAs substrate and contain high-density InGaSb QDs as the active medium owing to the use of silicon atom irradiation. Testing demonstrated that they have optical-communication-waveband emission peaks at around 1.55 µm in cw wave operation at room temperature under conditions of optical pumping and current injection. Additionally, it was found that these Sb-based QD-VCSELs have threshold characteristics in the emission intensities vs both optical-pumping power and current.