FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node
FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node
复制标题
7 nm 技术节点基于 FinFET 的逆变器设计和优化
作者：
J. Jena;D. Jena;E. Mohapatra;S. Das;Tara Prasanna Dash
应力工程是提高设备潜力的最佳技术之一。在这项工作的第一阶段中，使用二维和一维应力映射技术的FinFET为基础的反相器的物理和电气性能的应力的影响进行了研究。通过<100>< 110>在n-FinFET中产生的张应力和在p-FinFET中产生的压应力，分别在和方向的侧壁鳍中呈现电子和空穴迁移率增强。根据侧壁取向（<100 >或< 110>），电子和空穴的迁移率增强量分别大于100%（>100%）和小于25%（<25%）。在第二阶段，设计技术协同优化（DTCO）方法在反相器标准单元的产生，使VLSI数字系统的设计流程的基础上，使用FinFET的标准单元。采用GTS TCAD框架设计了7 nm工艺节点的FinFET逆变器。通过优化设计，给出了器件的电流密度、吞吐延迟、平均功耗和开关能量等电气特性的最优值。
Stress engineering is one of the best techniques to enhance the potential of a device. In the first phase of this work, the impact of stress on the physical and electrical performance of FinFET based inverter is investigated using 2D and 1D stress mapping techniques. Electrons and holes mobility enhancements are presented in the sidewall fins of <100> and < 110> direction respectively, by resulting tensile stress in n-FinFET and compressive stress in p-FinFET. According to the sidewall orientation (<100 > or < 110>), the amount of mobility enhancement of both the electrons and holes are resulting in more than 100% (>100%) and less than 25% (<25%) respectively. In the second phase, Design Technique Co-Optimization (DTCO) method is approached in inverter standard cells generation to enable the VLSI digital system design flow based on standard cells using FinFET. FinFET-based inverters at 7 nm technology nodes is designed using the GTS TCAD framework. The optimal electrical characteristics such as current density, throughput delay, average power dissipation, and switching energy are presented with optimal design.