Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
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DOI：
10.1103/physrevlett.103.016805
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发表时间：
2009-07-03
影响因子：
8.6
通讯作者：
Ritchie, D. A.
中科院分区：
文献类型：
--
作者：
Petersson, K. D.;Smith, C. G.;Ritchie, D. A.
我们研究了两个电容耦合的GaAs/AlGaAs少电子双量子点之间的相互作用。每个双量子点定义了一个可调谐的两能级系统，或量子位，其中一个多余的电子占据一个点或另一个点的基态。利用微波辐射，我们共振驱动状态之间的转换，并使用近量子点接触电荷探测器无创测量占用变化。通过改变双量子点的能量失谐，以固定的微波频率驱动双量子比特系统来探测相互作用的能级结构。我们观察到与简单耦合双量子位哈密顿模型一致的额外共振跃迁。
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies the ground state of either one dot or the other. Applying microwave radiation, we resonantly drive transitions between states and noninvasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency while varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.