Magnetoresistance oscillations induced by high-intensity terahertz radiation

Magnetoresistance oscillations induced by high-intensity terahertz radiation
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高强度太赫兹辐射引起的磁阻振荡

DOI:
10.1103/physrevb.96.115449
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发表时间:
2017
期刊:
影响因子:
3.7
通讯作者:
S. D. Ganichev
S. D. Ganichev
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
T. Herrmann;Z. D. Kvon;I. A. Dmitriev;D. A. Kozlov;B. Jentzsch;M. Schneider;L. Schell;V. V. Bel'kov;A. Bayer;D. Schuh;D. Bougeard;T. Kuczmik;M. Oltscher;D. Weiss;S. D. Ganichev

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我们报告观察到明显的太赫兹辐射诱导的磁阻振荡AlGaAs/GaAs二维电子系统,太赫兹模拟的微波诱导的电阻率振荡(MIRO)。应用脉冲分子激光的高功率辐射,我们证明了MIRO,迄今为止只在低功率下观察到,即使在非常高的强度下也不会被破坏。辐射强度从0.1到5个数量级的实验揭示了MIRO振幅的高功率饱和,这是很好地描述了经验拟合函数。饱和强度是每平方厘米几十瓦的数量级,并通过增加辐射频率从0.6到1.1太赫兹增加了6倍。的微观机制MIRO的结果进行了讨论,并在显着较低的激发频率观察到的非线性效应相比。
We report on observation of pronounced terahertz radiation-induced magnetoresistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the terahertz analog of the microwave induced resistivity oscillations (MIRO). Applying high-power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from 0.1 toreveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit functionwith. The saturation intensityis of the order of tens of watts per square centimeter and increases by a factor of 6 by increasing the radiation frequency from 0.6 to 1.1 THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies.
介观半导体结构中的电子量子传输
DOI: --
发表时间: 2004
期刊:
影响因子: --
作者:
T. Ihn
通讯作者: T. Ihn