Barrier formation at graded HgTe/CdTe heterojunctions
Barrier formation at graded HgTe/CdTe heterojunctions
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DOI：
10.1063/1.363487
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发表时间：
1996-11
影响因子：
3.2
通讯作者：
D. Goren;G. Asa;Y. Nemirovsky
中科院分区：
文献类型：
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作者：
D. Goren;G. Asa;Y. Nemirovsky
本文对梯度HgTe/CdTe异质结平衡态能带图进行了数值计算和讨论。计算是在整个组成范围（0<x<1）内进行的，使用非抛物线导带和费米-狄拉克统计。的依赖性的势垒形成在渐变的异质结检查作为一个功能的渐变区域的宽度和渐变区域的掺杂分布。梯度区的宽度和掺杂分布被认为是两个主要因素，决定是否形成障碍，以及它们的形状和大小。计算结果表明，外延欧姆碲化汞接触到非本征碲化镉是可能的，只要梯度区域是宽于一微米，它具有相同的掺杂类型的掺杂的衬底具有相等或更高的绝对值。进一步的数值计算考虑到可能存在的分布界面电荷的梯度区的HJ。结果表明，通过假设一个经典的Transpor…
Numerical calculations of graded HgTe/CdTe heterojunction (HJ) band diagrams at equilibrium are presented and discussed. The calculations are performed in the entire compositional range (0<x<1), using a nonparabolic conduction band and Fermi‐Dirac statistics. The dependence of barrier formation at graded HJs are examined as a function of the graded region width and the graded region doping profiles. The graded region width and doping profiles were found to be the two main factors that determine whether barriers are formed as well as their shape and magnitude. The calculated results indicate that epitaxial ohmic HgTe contacts to extrinsic CdTe are possible, provided that the graded region is wider than one micron, and that it has the same doping type as the doping of the substrate with equal or higher absolute value. Further numerical calculations take into consideration the possible existence of distributed interface charges in the graded region of the HJ. It is shown that by assuming a classical transpor...