The character of WO3 film prepared with RF sputtering
The character of WO3 film prepared with RF sputtering
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DOI：
10.1016/j.solmat.2005.11.014
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发表时间：
2007-01
影响因子：
6.9
通讯作者：
Y. Yamada;K. Tabata;K. Tabata;T. Yashima;T. Yashima
中科院分区：
文献类型：
--
作者：
Y. Yamada;K. Tabata;K. Tabata;T. Yashima;T. Yashima
The effects of preparation conditions on WO3films using RF reactive sputtering were investigated in order to prepare a high efficiency semiconductor electrode. The properties of the electrodes were measured in the solution of H2SO4. We found the optimum condition for the photocurrent in our system. The photocurrent is independent of O2concentration in the range of 20–50%. We suppose that a photocurrent of WO3depends on an orientation and a grain size. The result of XRD spectra corresponded well with SEM image. From the SEM images and the absorption spectra it was considered that the thicker the WO3films were the rougher the surface became.
