Uniaxial Magnetic Anisotropy in La0.7Sr0.3MnO3 Thin Films Induced by Multiferroic BiFeO3 with Striped Ferroelectric Domains

Uniaxial Magnetic Anisotropy in La0.7Sr0.3MnO3 Thin Films Induced by Multiferroic BiFeO3 with Striped Ferroelectric Domains
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DOI:
10.1002/adma.201001990
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发表时间:
2010-11
期刊:
影响因子:
29.4
通讯作者:
L. You;Chengliang Lu;Pan Yang;G. Han;Tom Wu;U. Luders;W. Prellier;K. Yao;Lang Chen;Junling Wa
L. You;Chengliang Lu;Pan Yang;G. Han;Tom Wu;U. Luders;W. Prellier;K. Yao;Lang Chen;Junling Wa
中科院分区:
材料科学1区
文献类型:
--
作者:
L. You;Chengliang Lu;Pan Yang;G. Han;Tom Wu;U. Luders;W. Prellier;K. Yao;Lang Chen;Junling Wa

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多铁性材料同时具有至少两种类型的铁性,有序参数通常是相互耦合的,这导致了额外的功能,使它们变得独特和吸引人。然而,大多数单相多铁材料的转变温度远低于室温,这限制了其潜在的应用。[1]到目前为止,BiFeO_3(BFO)是唯一一种室温下铁电和磁序共存的材料。此外,在薄膜和单晶样品中都发现了铁电极化和反铁磁自旋之间的紧密耦合,这使得电子控制磁性成为可能。[4-7]由于BFO本质上是反铁磁性的(尽管Fe3+磁矩倾斜会导致较小的磁化强度),因此必须引入一种具有可检测磁矩的铁磁材料才能应用。相当多的研究集中在BFO与薄铁磁层之间的交换耦合。在不同的BFO基异质结构中观察到了交换偏置。[8-10]BFO中铁电畴尺寸和畴壁类型都对交换偏置有很大的影响。[11,12]此外,在薄膜和单层薄膜中都显示了局部磁化的电操作
Multiferroic materials simultaneously possess at least two types of ferroic properties and the order parameters are usually coupled to each other, which leads to additional functionalities that make them unique and appealing. However, the transition temperatures of most single-phase multiferroic materials are well below room temperature, which limits their potential applications. [ 1 ] So far, BiFeO 3 (BFO) is the only material with both ferroelectric and magnetic orders coexisting at room temperature. [ 2 , 3 ] Furthermore, the intimate coupling between ferroelectric polarization and antiferromagnetic spins has been confi rmed in both thin fi lm and single crystal samples, which makes electric control of magnetism possible. [ 4–7 ] Since BFO is antiferromagnetic in nature (even though canting of Fe 3 + magnetic moments leads to a small magnetization), [ 3 ] a ferromagnetic material with detectable magnetic moment must be introduced for application purposes. Considerable research has focused on the exchange coupling between BFO and a thin ferromagnetic layer. Exchange bias has been observed in different BFO-based heterostructures. [ 8–10 ] Both ferroelectric domain size and the type of domain walls in BFO affect the exchange bias strongly. [ 11 , 12 ] Furthermore, electrical manipulation of local magnetization has been demonstrated in both thin fi lm and single