Electrical spin injection and detection in molybdenum disulfide multilayer channel.
Electrical spin injection and detection in molybdenum disulfide multilayer channel.
复制标题
DOI：
10.1038/ncomms14947
复制
发表时间：
2017-04-07
影响因子：
16.6
通讯作者：
Lu Y
中科院分区：
文献类型：
--
作者：
Liang S;Yang H;Renucci P;Tao B;Laczkowski P;Mc-Murtry S;Wang G;Marie X;George JM;Petit-Watelot S;Djeffal A;Mangin S;Jaffrès H;Lu Y
二硫化钼是一种新型的二维半导体材料，在纳米电子、光电子和自旋电子等领域有着广泛的应用。然而，通过半导体二硫化钼通道的电子自旋输运的演示仍然具有挑战性。在这里，我们显示的证据的电自旋注入和检测的多层二硫化钼半导体沟道的导带中使用的两个终端的自旋阀配置的几何形状。通过一个450 nm长，6单层厚的MoS 2通道与Co/MgO隧道自旋注入器和检测器已观察到约1%的磁电阻。研究发现，保持界面电阻和沟道电阻之间的良好平衡是观察双端磁电阻的必要条件。此外，电子自旋弛豫被发现大大抑制在多层二硫化钼沟道与面内自旋极化。长的自旋扩散长度（约为235 nm），可以打开一个新的途径，自旋电子学的应用，使用多层过渡金属二硫属化物。MoS 2是光电子和自旋电子学应用的一个有前途的二维候选者。在这里，作者报告了在几层MoS 2沟道中的电自旋注入和检测，证明了在MoS 2导带中的自旋扩散长度至少为235 nm。
Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. MoS2 is a promising two-dimensional candidate for opto-electronic and spintronic applications. Here, the authors report electrical spin injection and detection in a few-layered MoS2 channel, demonstrating that the spin diffusion length is at least 235 nm in MoS2 conduction band.