Study on capacitive Frisch grid CdZnTe detector parameter optimization and fabrication
Study on capacitive Frisch grid CdZnTe detector parameter optimization and fabrication
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DOI：
10.1002/pssc.200983220
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
Dongni Hu;Linjun Wang;J. Min;K. Qin;Jijun Zhang;Jian Huang;Yiben Xia
中科院分区：
文献类型：
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作者：
Dongni Hu;Linjun Wang;J. Min;K. Qin;Jijun Zhang;Jian Huang;Yiben Xia
本文首次在三维加权电势分析的基础上，利用有限元模拟的方法，首次对圆柱形电容式Frisch栅极CdZnTe探测器的设计参数进行了优化。研究了不同屏长与器件高度之比(L/H)、绝缘体厚度(D)、绝缘体相对介电常数(Er)、阳极电极面积以及阳极直径与器件高度之比(D/H)对模型加权电势的影响。得到了L/H=80%，d/er=0.05 mm，阳极直径约为2 mm，D/H=1/2的最佳工艺参数。(2010Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
In this paper, the design parameters of the cylindrical capacitive Frisch grid CdZnTe detector were optimized through a finite-element simulation method using ANSYS software, based on a 3-dimensional weighting potential analysis for the first time. The weighting potential distributions of the model with the different ratio of screen length to device height (L /H), insulator thickness (d), insulator relative permittivity (er), electrode areas of anode and the ratio of anode diameter to device height (D /H), were studied. The optimized parameters with an L /H value of 80%, d /er< 0.05 mm, the anode diameter of about 2 mm and a D /H value <1/2, were obtained. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)