Rapid vapor deposition of highly conformal silica nanolaminates
Rapid vapor deposition of highly conformal silica nanolaminates
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DOI：
10.1126/science.1073552
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发表时间：
2002-10-11
期刊：
影响因子：
56.9
通讯作者：
Gordon, RG
中科院分区：
文献类型：
--
作者：
Hausmann, D;Becker, J;Gordon, RG
通过将表面交替暴露于两种反应物的蒸气，可以形成高度均匀和保形的涂层，该过程通常称为原子层沉积（ALD）。然而，由于沉积速率缓慢，理论上每个周期最多沉积一个单层，因此 ALD 的应用受到限制。我们表明，表面交替暴露于三甲基铝和三（叔丁氧基）硅烷醇的蒸气，可以每个周期以 12 纳米（超过 32 个单层）的速率沉积高度共形的非晶二氧化硅和氧化铝纳米层压层。此过程可以均匀地衬里或填充长而窄的孔。我们提出这些 ALD 层是通过以前未知的催化机制生长的，该机制也在许多其他金属硅酸盐的快速 ALD 过程中起作用。该工艺应该可以改进许多器件的生产，例如微电子中晶体管之间的沟槽绝缘、平面波导、微机电结构、多层光学滤波器以及防扩散、氧化或腐蚀的保护层。
Highly uniform and conformal coatings can be made by the alternating exposures of surface to vapors of two reactants, in process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with theoretical maximum of one monolayer per cycle. We show that alternating exposure of surface to vapors of trimethylaluminum and tris(tert-butoxy) silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers ( more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.