Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template
Hydride vapor phase epitaxy growth of high-quality GaN film on in situ etched GaN template
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DOI：
10.1016/j.matlet.2009.01.061
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发表时间：
2009-04-30
影响因子：
3
通讯作者：
Li, Aizhen
中科院分区：
文献类型：
--
作者：
Lin, Chaotong;Yu, Guanghui;Li, Aizhen
本文采用氢化物气相外延法（HVPE）在原位蚀刻多孔GaN模板上生长高质量的GaN薄膜，该薄膜可通过HCl气体在高温下对GaN模板进行原位蚀刻制备。高分辨率x射线衍射测量表明，在多孔GaN模板上制备的hpe -GaN薄膜的结晶质量优于直接沉积在生长的GaN模板上的薄膜。微拉曼测量结果显示，在多孔GaN模板上再生的GaN薄膜存在压缩应变松弛现象，这与光致发光光谱测量结果一致。(C) 2009 Elsevier B.V.版权所有
In this paper, high-quality GaN film is grown by hydride vapor phase epitaxy (HVPE) on in situ etched porous GaN template, which can be prepared by in situ etching of GaN template with HCl gas at high temperature. High-resolution X-ray diffraction measurement shows that the crystalline quality of HVPE-GaN film on porous GaN template is better than that directly deposited on as-grown GaN template. Micro Raman measurement reveals the compressive strain relaxation in the regrown GaN film on porous GaN template, which coincides with the result of the photoluminescence spectra measurement. (C) 2009 Elsevier B.V. All rights reserved.