Junction recombination current in abrupt junction diodes under forward bias
Junction recombination current in abrupt junction diodes under forward bias
复制标题
正向偏置下突变结二极管的结复合电流
DOI：
10.1063/1.363168
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
M. Green
中科院分区：
文献类型：
--
作者：
R. Corkish;M. Green
提出了一种新的分析方法来计算正向偏压下突变结二极管耗尽区复合电流。当复合电流主要通过单一能级的肖克利-里德-霍尔中心进行复合时，该方法是合适的，该能级的密度随器件的位置变化不大。新模型与以前的模型以及使用PC - 1D进行有限元分析的结果进行了系统的比较。如果可以合理地假设PC - 1D是这里考虑的方法中最准确的，那么其他方法可以根据它们与PC - 1D结果的接近程度进行排名。结果表明，尽管新方法简单，但在许多实际情况下，其结果比早期的模型更接近PC - 1D。此外，通过对积分极限的简单修改，可以使已有的一个模型与有限元分析相一致。
A new, analytical method is presented for calculating the depletion‐region recombination current for abrupt‐junction diodes under forward bias. The method is appropriate when the recombination current is dominated by recombination through Shockley–Read–Hall centers at a single energy level whose density does not vary strongly with position through the device. The new model is systematically compared with earlier models and with the results of finite‐element analyses using PC‐1D. If it is reasonably assumed that PC‐1D is the most accurate of the methods considered here, the others may be ranked according to their proximity to the PC‐1D result. It is shown that the new method, despite its simplicity, yields results closer to PC‐1D than the earlier models for many practical situations. In addition, it is shown that one existing model may be brought into agreement with the finite‐element analysis by a simple modification of the limits of integration.