Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates
Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates
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Si 衬底上四分之一微米 GaAs 金属半导体场效应晶体管的性能
DOI：
10.1063/1.97257
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发表时间：
1986
影响因子：
4
通讯作者：
L. Erickson
中科院分区：
文献类型：
--
作者：
M. I. Aksun;H. Morkoç;L. Lester;K. Duh;P. Smith;P. Chao;M. Longerbone;L. Erickson
在向<110>方向倾斜4°的<100>硅衬底上直接生长了栅长为四分之一微米的金属半导体场效应晶体管(MESFET)。在生长了2μm的非掺杂GaAs缓冲层后，用分子束外延方法生长了掺硅3μm的−3。器件表现出良好的直流特性，非本征跨导高达360ms/mm。根据测量到的20 GHz的散射参数外推得到的短路电流增益的截止频率为55 GHz，这与最好的GaAs衬底上的MESFET相当。在18 GHz下测得的噪声系数为2.8分贝，比在砷化镓衬底上测得的噪声系数高约1.4分贝。
Metal‐semiconductor field‐effect transistors (MESFET’s) having quarter‐micron gate lengths were fabricated in GaAs films grown directly on 〈100〉 silicon tilted towards 〈110〉 by 4°. Following the growth of 2 μm undoped GaAs buffer layer a 3 μm GaAs doped with Si to a level of 3×1017 cm−3 was grown all by molecular beam epitaxy. Devices showed good dc characteristics with extrinsic transconductances as high as 360 mS/mm. Extrapolation of the short‐circuit current gain calculated from scattering parameters measured up to 20 GHz indicated a current gain cut‐off frequency of 55 GHz, which is comparable to the best MESFET on GaAs substrates. The noise figure measured at 18 GHz was 2.8 dB, which is about 1.4 dB higher than that on GaAs substrates.